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Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps

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Author

Summary, in English

We demonstrate a wet chemical method to selectively etch InP segments within InAs/InP heterostructure nanowires based on a photo-assisted HAc/HBr solution etching process. We successfully etched InP segments ranging from 60 nm down to about 10 nm in size.

Publishing year

2016-01-20

Language

English

Pages

1489-1492

Publication/Series

IEEE-NANO 2015 - 15th International Conference on Nanotechnology

Document type

Conference paper

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Nano Technology
  • Condensed Matter Physics

Keywords

  • heterostructure nanowire
  • InAs/InP
  • nanogap electrodes
  • selective etching

Conference name

15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015

Conference date

2015-07-27 - 2015-07-30

Conference place

Rome, Italy

Status

Published

ISBN/ISSN/Other

  • ISBN: 9781467381550