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20 GHz Wavelet Generator Using a Gated Tunnel Diode

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Author

Summary, in English

We demonstrate the use of a GaAs-AlGaAs gated tunnel diode (GTD) in an ultra-wideband (UWB) wavelet generator. An inductor is integrated to form an oscillator circuit, which is driven by the negative differential conductance property of a GTD. It is demonstrated that as the gate tunes the magnitude of the output conductance, the oscillator may be switched on and off, creating short RF pulses. The shortest pulses generated are 500 ps long, the highest output power for the free running oscillator is -4.1 dBm, and the highest oscillation frequency is 22 GHz. Analytical expressions based on the van der Pol equation describing the pulse length and amplitude are presented. This technique is applicable for high frequency impulse radio UWB implementations.

Publishing year

2009

Language

English

Pages

386-388

Publication/Series

IEEE Microwave and Wireless Components Letters

Volume

19

Issue

6

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Keywords

  • ultra-wideband (UWB)
  • transistor
  • resonant tunneling
  • pulse generator
  • Impulse radio (IR)
  • oscillator
  • wavelet generator

Status

Published

Research group

  • Nano

ISBN/ISSN/Other

  • ISSN: 1531-1309