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Gold-free growth of GaAs nanowires on silicon: arrays and polytypism

På svenska

Author

  • Sebastien Plissard
  • Kimberly Dick Thelander
  • Guilhem Larrieu
  • Sylvie Godey
  • Ahmed Addad
  • Xavier Wallart
  • Philippe Caroff

Summary, in English

We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs nanowires on silicon. The influences of growth temperature and V/III ratio are investigated and compared in the case of oxide-covered and oxide-free substrates. We demonstrate a precise positioning process for Ga-nucleated GaAs nanowires using a hole array in a dielectric layer thermally grown on silicon. Crystal quality is analyzed by high resolution transmission electron microscopy. Crystal structure evolves from pure zinc blende to pure wurtzite along a single nanowire, with a transition region.

Publishing year

2010

Language

English

Publication/Series

Nanotechnology

Volume

21

Issue

38

Document type

Journal article

Publisher

IOP Publishing

Topic

  • Nano Technology

Status

Published

ISBN/ISSN/Other

  • ISSN: 0957-4484