A 1.8-GHz CMOS VCO tuned by an accumulation-mode MOS varactor
Author
Summary, in English
This work presents a 1.8-GHz VCO tuned by a pMOS capacitor working exclusively in the accumulation and depletion regions. The VCO has been fabricated in a standard 0.6 μm CMOS process. It shows a tuning range of about 11% and a phase noise of -137 dBc/Hz at 3 MHz offset from the carrier, for a current consumption of 2.7 mA. The VCO compares favorably with a CMOS VCO tuned by a reverse biased diode varactor
Publishing year
2000
Language
English
Pages
315-318
Publication/Series
The 2000 IEEE International Symposium on Circuits and Systems, 2000. Proceedings. ISCAS 2000.
Volume
1
Links
Document type
Conference paper
Topic
- Electrical Engineering, Electronic Engineering, Information Engineering
Status
Published
ISBN/ISSN/Other
- ISBN: 0-7803-5482-6