Electron-Beam Patterning of Polymer Electrolyte Films To Make Multiple Nanoscale Gates for Nanowire Transistors
Author
Summary, in English
We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO4 polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap, which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices.
Department/s
Publishing year
2014
Language
English
Pages
94-100
Publication/Series
Nano Letters
Volume
14
Issue
1
Document type
Journal article
Publisher
The American Chemical Society (ACS)
Topic
- Nano Technology
Keywords
- III-V nanowires
- polymer electrolytes
- electron beam lithography
- nanoelectronics
Status
Published
Research group
- Nanometer structure consortium (nmC)
ISBN/ISSN/Other
- ISSN: 1530-6992