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Electron microscopy based studies of catalytically grown semiconductor nanowires

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Author

Editor

  • Giancarlo Salviati
  • T Sekiguchi
  • S Heun
  • Anders Gustafsson

Summary, in English

We give an introduction to modern electron microscopy techniques, applied to semiconductor structures. We concentrate on the analytical capabilities of high resolution transmission electron microscopy (TEM) and luminescence-based analysis, cathodoluminescence, in the scanning electron microscope. For the TEM, we will demonstrate a number of techniques and detection schemes, such as energy dispersive analysis of X-rays, electron energy loss spectroscopy, high-angle annular darkfield, and Fourier and strain mapping. The capabilities of the techniques are illustrated by various semiconductor nanowires (NWs), grown catalytically by gold seed-particles on planar substrates. These structures include homogeneous NWs, heterostructured NWs, core-shell NWs and branched NWs.

Publishing year

2008

Language

English

Pages

1-35

Publication/Series

Beam Injection Based Nanocharacterization of Advanced Materials

Document type

Book chapter

Publisher

Research Signpost

Topic

  • Condensed Matter Physics
  • Chemical Sciences

Status

Published

ISBN/ISSN/Other

  • ISBN: 978-81-308-0226-8