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Fabrication of Si-based nanoimprint stamps with sub-20 nm features

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Author

Summary, in English

We present two alternative methods for fabrication of nanoimprint lithography stamps in SiO2 with sub-20 nm features: (a) optimized electron beam lithography (EBL) and lift-off patterning of a 15-nm thick Cr mask, and (b) aerosol deposition of W particles in the 20-nm size range. In both cases, the pattern transfer into SiO2 was performed using reactive ion etching (RIE) with CHF3 as etch gas. In the first approach, we used a double layer resist system (PMMA/ZEP 520A7 positive resists) for the EBL exposure. Resist thickness, exposure dose and development time were optimized to obtain 15-20 nm features after Cr lift-off. In the second approach, we used size selected W aerosol particles as etch masks during etching of SiO2. Both methods of stamp fabrication are compared and discussed. (C) 2002 Published by Elsevier Science B.V.

Publishing year

2002

Language

English

Pages

449-454

Publication/Series

MICROELECTRONIC ENGINEERING

Volume

61-2

Document type

Conference paper

Publisher

Elsevier

Topic

  • Condensed Matter Physics

Keywords

  • aerosols
  • electron beam lithography
  • nanoimprint
  • etching

Conference name

Micro and Nano Engineering 2001

Conference date

2001-09-16 - 2001-09-19

Status

Published

ISBN/ISSN/Other

  • ISSN: 1873-5568
  • ISSN: 0167-9317