Epitaxial III-V nanowires on silicon
Author
Summary, in English
We present results of ideal epitaxial nucleation and growth of III-V semiconductor nanowires on silicon substrates. This addresses the long-time challenge of integrating high performance III-V semiconductors with mainstream Si technology. Efficient room-temperature generation of light on silicon is demonstrated by the incorporation of double heterostructure segments in such nanowires. We expect that advanced heterostructure devices, such as resonant tunneling diodes, superiattice device structures, and heterostructure photonic devices for on-chip communication, could now become available as complementary device technologies for integration with silicon.
Publishing year
2004
Language
English
Pages
1987-1990
Publication/Series
Nano Letters
Volume
4
Issue
10
Document type
Journal article
Publisher
The American Chemical Society (ACS)
Topic
- Nano Technology
Status
Published
ISBN/ISSN/Other
- ISSN: 1530-6992