Domain-wall controlled (Ga,Mn)As nanostructures for spintronic applications

Summary, in English

Valence-band structure and magnetic properties, especially magnetic anisotropies, in the (Ga,Mn)As diluted ferromagnetic semiconductor are shortly discussed. Next, magneto-resistive, cross-like nanostructures fabricated by electron-beam lithography patterning and chemical etching from thin (Ga,Mn)As epitaxial layers are described. The nanostructures, composed of two perpendicular nanostripes crossing in the middle of their length, represent four-terminal devices, in which an electric current can be driven through any of the two nanostripes. In these devices, which make use of the patterning-induced magnetic anisotropy, a novel magneto-resistive memory effect related to a rearrangement of magnetic domain walls in the central part of the device, has been demonstrated. The effect consists in that the zerb-field resistance of a nanostripe depends on the direction of previously applied magnetic field. The nanostructures can thus work as two-state devices providing basic elements of nonvolatile memory cells. (C) 2012 Elsevier B.V. All rights reserved.

• Author: Tadeusz Wosinski; Tomasz Andrearczyk; Tadeusz Figielski; Jerzy Wrobel; Janusz Sadowski
• Department/s: MAX IV Laboratory
• Publishing year: 2013
• Language: English
• Pages: 128-134
• Publication/Series: Physica E: Low-Dimensional Systems and Nanostructures
• Volume: 51
• Links: http://dx.doi.org/10.1016/j.physe.2012.12.006
• Document type: Journal article
• Publisher: Elsevier
• Topic: Natural Sciences; Physical Sciences
• Status: Published
• ISBN/ISSN/Other: ISSN: 1386-9477